A METHOD FOR ELIMINATING HILLOCKS IN INTEGRATED-CIRCUIT METALLIZATIONS

被引：18

作者：

CADIEN, KC

LOSEE, DL

机构：

[1] RENSSELAER POLYTECH INST,CTR INTEGRATED ELECTR,TROY,NY 12181

[2] EASTMAN KODAK CO,RES LABS,ROCHESTER,NY 14650

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 01期

关键词：

D O I：

10.1116/1.582921

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：82 / 83

页数：2

共 13 条

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[2]

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[3] HILLOCK-FREE INTEGRATED-CIRCUIT METALLIZATIONS BY AL-AL-O LAYERING [J].

FAITH, TJ .

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[4] HILLOCK GROWTH ON VACUUM-DEPOSITED ALUMINUM FILMS [J].

HERMAN, DS ;

SCHUSTER, MA ;

GERBER, RM .

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[5] STRESS RELIEF AND HILLOCK FORMATION IN THIN LEAD FILMS [J].

LAHIRI, SK .

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[6]

LIM SCP, 1982, SEMICOND INT, V5, P135

[7] HIGH-RATE SPUTTERING OF ALUMINUM FOR METALLIZATION OF INTEGRATED-CIRCUITS [J].

MCLEOD, PS ;

HARTSOUGH, LD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01) :263-265

[8] PROPERTIES OF SPUTTERED TUNGSTEN SILICIDE FOR MOS INTEGRATED-CIRCUIT APPLICATIONS [J].

MOHAMMADI, F ;

SARASWAT, KC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) :450-454

[9]

PATTERSON RJ, 1972, EL SOC EXT ABSTR, V72, P633

[10] THERMAL CYCLING AND SURFACE RECONSTRUCTION IN ALUMINUM THIN FILMS [J].

SANTORO, CJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (03) :361-&

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