EL2-DEFECT-RELATED CHANGES IN THE MAGNETOPHOTOCONDUCTIVITY OF SHALLOW DONORS IN BULK SEMI-INSULATING GAAS

被引：14

作者：

SADOWSKI, ML ^{[1
]}

KARPIERZ, K ^{[1
]}

GRYNBERG, M ^{[1
]}

机构：

[1] UNIV WARSAW,INST EXPTL PHYS,PL-00325 WARSAW,POLAND

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.43.7332

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The far-infrared photoconductivity of semi-insulating GaAs was measured as a function of magnetic field, and transitions to excited states of shallow donors observed. The measurements were performed for two states of the material: (a) with the EL2 defects in the stable EL2(0) state and (b) with the EL2 defects in the metastable EL2* state. The linewidth of the donor transitions was found to be larger in the second case, in spite of the decrease in the number of charges in the sample. A model of spatial correlation between EL2+ defects and ionized acceptors is proposed to explain this fact.

引用

页码：7332 / 7334

页数：3

共 11 条

[1] FAR-INFRARED STUDIES OF CENTRAL-CELL STRUCTURE OF SHALLOW DONORS IN GAAS AND INP [J].