ELECTRON TRAPPING IN ALUMINUM-IMPLANTED SILICON DIOXIDE FILMS ON SILICON

被引：25

作者：

JOHNSON, NM ^{[1
]}

JOHNSON, WC ^{[1
]}

LAMPERT, MA ^{[1
]}

机构：

[1] PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08540

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 03期

关键词：

D O I：

10.1063/1.321728

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：1216 / 1222

页数：7

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