DEPTH PROFILE OF THERMAL DONOR IN BORON-DOPED CZOCHRALSKI-GROWN SILICON

Near-complete suppression of thermal donor formation is observed at the silicon surface independent of annealing time. Schottky barrier capacitance-voltage profiling of p-type Czochralski silicon following heat treatment at 200-450-degrees-C in N2 indicates thermal donor depletion near the surface consistent with earlier reports. Analysis of the capacitance-voltage method indicates that series resistance effects on the depth profile are negligible. Possible mechanisms for the thermal donor depletion at the silicon surface are discussed.