HYDROGENATION OF SILICON-NITRIDE AND SILICON OXYNITRIDE FILMS DEPOSITED BY REACTIVE SPUTTERING - OPTICAL-PROPERTIES

被引:7
作者
SCHALCH, D
SCHARMANN, A
WOLFRAT, R
机构
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1987年 / 100卷 / 01期
关键词
D O I
10.1002/pssa.2211000164
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
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页码:K87 / K92
页数:6
相关论文
共 12 条
[1]   OPTICAL-PROPERTIES, BAND-GAP, AND SURFACE-ROUGHNESS OF SI3N4 [J].
BAUER, J .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 39 (02) :411-418
[2]   OPTICAL-CONSTANTS OF RF SPUTTERED HYDROGENATED AMORPHOUS SI [J].
FREEMAN, EC ;
PAUL, W .
PHYSICAL REVIEW B, 1979, 20 (02) :716-728
[3]   DETERMINATION OF REFRACTIVE INDEX OF THIN DIELECTRIC FILMS [J].
HACSKAYLO, M .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1964, 54 (02) :198-&
[4]   ELECTRONIC-STRUCTURE OF HYDROGENATED AND UNHYDROGENATED AMORPHOUS SINX (0-LESS-THAN-X-LESS-THAN-1.6) - A PHOTOEMISSION-STUDY [J].
KARCHER, R ;
LEY, L ;
JOHNSON, RL .
PHYSICAL REVIEW B, 1984, 30 (04) :1896-1910
[5]   LOW-TEMPERATURE PLASMA CHEMICAL VAPOR-DEPOSITION OF SILICON OXYNITRIDE THIN-FILM WAVEGUIDES [J].
LAM, DKW .
APPLIED OPTICS, 1984, 23 (16) :2744-2746
[6]  
PEERCY PS, 1983, P S SILICON NITRIDE, V83, P3
[7]   GAP STATES IN SILICON-NITRIDE [J].
ROBERTSON, J ;
POWELL, MJ .
APPLIED PHYSICS LETTERS, 1984, 44 (04) :415-417
[8]   THE ROLE OF HYDROGEN IN SILICON-NITRIDE AND SILICON OXYNITRIDE FILMS [J].
SCHALCH, D ;
SCHARMANN, A ;
WOLFRAT, R .
THIN SOLID FILMS, 1985, 124 (3-4) :301-308
[9]  
SCHALCH D, IN PRESS
[10]   IN-GAP OPTICAL-ABSORPTION OF AMORPHOUS SI3N4 [J].
SEAGER, CH ;
KNAPP, JA .
APPLIED PHYSICS LETTERS, 1984, 45 (10) :1060-1062