THE EFFECT OF SURFACE-TOPOGRAPHY EVOLUTION ON SPUTTER PROFILING DEPTH RESOLUTION IN SI

被引：11

作者：

CARTER, G ^{[1
]}

NOBES, MJ ^{[1
]}

LEWIS, GW ^{[1
]}

BROWN, CR ^{[1
]}

机构：

[1] UNIV SALFORD,THIN FILMS & SURFACE RES CTR,SALFORD M5 4WT,LANCS,ENGLAND

来源：

SURFACE AND INTERFACE ANALYSIS | 1985年 / 7卷 / 01期

关键词：

SILICON AND ALLOYS - Radiation Damage;

D O I：

10.1002/sia.740070108

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Experimental studies of the development of surface topography on Si surfaces during Ar** plus ion bombardment and sputter erosion indicates that the Si becomes continuously prismatically facetted and that facet dimensions increase linearly with mean eroded depth. These observations lead to an analytic model of the achievable depth resolution delta z/z//0 in sputter erosion which is independent, for deep profiles of z//0.

引用

页码：35 / 40

页数：6

共 21 条

[1] DEPTH RESOLUTION OF SPUTTER PROFILING
ANDERSEN, HH
[J]. APPLIED PHYSICS, 1979, 18 (02): : 131 - 140
[2] ANALYSIS OF MONOMOLECULAR LAYERS OF SOLIDS BY SECONDARY ION EMISSION
BENNINGHOVEN, A
[J]. ZEITSCHRIFT FUR PHYSIK, 1970, 230 (05): : 403 - +
[3] THEORETICAL ASSESSMENTS OF MAJOR PHYSICAL PROCESSES INVOLVED IN THE DEPTH RESOLUTION IN SPUTTER PROFILING
CARTER, G
GRASMARTI, A
NOBES, MJ
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 62 (3-4): : 119 - 152
[4] THE EFFECT OF INCIDENCE ANGLE ON ION-BOMBARDMENT INDUCED SURFACE-TOPOGRAPHY DEVELOPMENT ON SINGLE-CRYSTAL COPPER
CARTER, G
NOBES, MJ
LEWIS, GW
WHITTON, JL
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 194 (1-3): : 509 - 514
[5] CARTER G, 1980, P S SPUTTERING, P604
[6] CARTER G, 1985, UNPUB VACUUM
[7] NOMOGRAPHIC METHOD FOR IDENTIFICATION OF INTERFACE POSITION ON ION-ETCH PROFILES
CASTLE, JE
HAZELL, LB
[J]. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1977, 12 (02) : 195 - 202
[8] SURFACE-MORPHOLOGY OF SI(100), GAAS(100) AND INP(100) FOLLOWING O-2+ AND CS+ ION-BOMBARDMENT
DUNCAN, S
SMITH, R
SYKES, DE
WALLS, JM
[J]. VACUUM, 1984, 34 (1-2) : 145 - 151
[9] ERLEWEIN J, 1980, THIN SOLID FILMS, V69, pL39
[10] FITCH RK, 1970, J PHYS D, V3, P1339

← 1 2 3 →