SPUTTERING OF SIO2 IN A XEF2 AND IN A CL-2 ATMOSPHERE

被引：56

作者：

OOSTRA, DJ ^{[1
]}

HARING, A ^{[1
]}

DEVRIES, AE ^{[1
]}

机构：

[1] FOM,INST ATOM & MOLEC PHYS,POB 41883,1009 DB AMSTERDAM,NETHERLANDS

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 06期

关键词：

D O I：

10.1116/1.583506

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1278 / 1282

页数：5

共 29 条

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[4] COSMA G, 1981, REV SCI INSTRUM, V52, P789
[5] STUDIES ON THE MECHANISM OF CHEMICAL SPUTTERING OF SILICON BY SIMULTANEOUS EXPOSURE TO CL-2 AND LOW-ENERGY AR+ IONS
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[6] EXPERIMENTAL-EVIDENCE FOR THE ABSENCE OF LOCAL THERMAL-EQUILIBRIUM IN CHEMICAL SPUTTERING
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[7] EITEL W, 1954, PHYSICAL CHEM SILICA
[8] DEHYDROXYLATION OF POROUS-GLASS BY MEANS OF CHLORINE
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[J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1981, 64 (03) : 150 - 154
[9] ION-ENHANCED GAS-SURFACE CHEMISTRY - THE INFLUENCE OF THE MASS OF THE INCIDENT ION
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[J]. SURFACE SCIENCE, 1981, 103 (01) : 177 - 188
[10] REACTIVE SPUTTERING OF SIMPLE CONDENSED GASES BY KEV IONS .2. MASS-SPECTRA
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[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 5 (03) : 476 - 482

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