ANALYSIS OF SIH VIBRATIONAL ABSORPTION IN AMORPHOUS SIOXH (O-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-2.0) ALLOYS IN TERMS OF A CHARGE-TRANSFER MODEL

Amorphous SiO(x):H films were deposited at 300-degrees-C by rf glow discharge of SiH4-O2 mixtures, and the SiH stretching vibrational absorption was investigated as a function of the oxygen content x. The absorption profiles were examined on the basis of the random-bonding model (RBM). The length d(SiH) of SiH bonds in four H-Si (Si3-nOn) bonding units was examined in terms of a charge-transfer model, using the Sanderson's electronegativity. Using these d(SiH) values, the peak wave numbers for the four components were found to be 2000, 2108, 2195, and 2260 cm-1, in agreement with the experimental ones determined on the basis of the RBM.