THE POTENTIAL DEPENDENCE OF SILICON ANISOTROPIC ETCHING IN KOH AT 60-DEGREES-C

被引：40

作者：

SMITH, RL ^{[1
]}

KLOECK, B ^{[1
]}

DEROOIJ, N ^{[1
]}

COLLINS, SD ^{[1
]}

机构：

[1] UNIV NEUCHATEL,INST MICROTECH,CH-2000 NEUCHATEL,SWITZERLAND

来源：

JOURNAL OF ELECTROANALYTICAL CHEMISTRY | 1987年 / 238卷 / 1-2期

关键词：

D O I：

10.1016/0022-0728(87)85168-9

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

收藏

页码：103 / 113

页数：11

相关论文

共 18 条

[1] [Anonymous], 1980, ELECTROCHEMICAL METH
[2] Bard A.J., 1976, ENCY ELECTROCHEMISTR, VV, P287
[3] SODIUM-HYDROXIDE SOLUTION SHOWS SELECTIVE ETCHING OF BORON-DOPED SILICON
BARYCKA, I
TETERYCZ, H
ZNAMIROWSKI, Z
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (02) : 345 - 346
[4] FABRICATION OF NOVEL 3-DIMENSIONAL MICROSTRUCTURES BY ANISOTROPIC ETCHING OF (100) AND (110) SILICON
BASSOUS, E
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) : 1178 - 1185
[5] ANISOTROPIC ETCHING OF SILICON
BEAN, KE
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) : 1185 - 1193
[6] FAUST JW, 1983, J ELECTROCHEM SOC, V130, P1413, DOI 10.1149/1.2119964
[7] BIAS-DEPENDENT ETCHING OF SILICON IN AQUEOUS KOH
GLEMBOCKI, OJ
STAHLBUSH, RE
TOMKIEWICZ, M
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (01) : 145 - 151
[8] AN ELECTROCHEMICAL P-N-JUNCTION ETCH-STOP FOR THE FORMATION OF SILICON MICROSTRUCTURES
JACKSON, TN
TISCHLER, MA
WISE, KD
[J]. ELECTRON DEVICE LETTERS, 1981, 2 (02): : 44 - 45
[9] ETCHING VERY NARROW GROOVES IN SILICON
KENDALL, DL
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (04) : 195 - 198
[10] STUDY OF THE ETCH-STOP MECHANISM IN SILICON
PALIK, ED
FAUST, JW
GRAY, HF
GREENE, RF
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) : 2051 - 2059