PT-NI BILAYERS ON N-TYPE SILICON - METALLURGICAL AND ELECTRICAL BEHAVIOR

被引：9

作者：

MANTOVANI, S

NAVA, F

NOBILI, C

QUEIROLO, G

CELOTTI, G

机构：

[1] SOC GEN SEMICOND SPA,I-20041 AGRATE,ITALY

[2] IST CNR,LAB MAT ELETIRON,I-40126 BOLOGNA,ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 04期

关键词：

D O I：

10.1063/1.333141

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：899 / 908

页数：10

共 19 条

[1]

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[3] THE INTERACTION OF NI-PT ALLOY WITH SILICON [J].

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[4]

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MAYER, JW .

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[8] NISI FORMATION AT THE SILICIDE/SI INTERFACE ON THE NIPT/SI SYSTEM [J].

OTTAVIANI, G ;

TU, KN ;

CHU, WK ;

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MAYER, JW .

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[9]

Ottaviani G., 1981, RELIABILITY DEGRADAT

[10]

PIRES JD, 1979, APPL PHYS LETT, V35, P202

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