DEGRADATION AND BREAKDOWN OF GATE OXIDES IN VLSI DEVICES

被引：36

作者：

SUNE, J

PLACENCIA, I

BARNIOL, N

FARRES, E

AYMERICH, X

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1989年 / 111卷 / 02期

关键词：

D O I：

10.1002/pssa.2211110235

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：675 / 685

页数：11

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共 25 条

[21] DIELECTRIC BREAKDOWN IN SILICON DIOXIDE FILMS ON SILICON .1. MEASUREMENT AND INTERPRETATION [J].

OSBURN, CM ;

ORMOND, DW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (05) :591-+

[22] NOVEL MECHANISM FOR TUNNELING AND BREAKDOWN OF THIN SIO2-FILMS [J].

RICCO, B ;

AZBEL, MY ;

BRODSKY, MH .

PHYSICAL REVIEW LETTERS, 1983, 51 (19) :1795-1798

[23] MECHANISM OF ELECTRICAL BREAKDOWN IN SIO2-FILMS [J].

RIDLEY, BK .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) :998-1007

[24] CHARACTERIZATION OF THE METAL-SIO2-SI INTERFACE ROUGHNESS BY ELECTRICAL METHODS [J].

SUNE, J ;

PLACENCIA, Y ;

CAMPABADAL, F ;

AYMERICH, X .

SURFACE SCIENCE, 1987, 189 :346-352

[25] THE RELATION BETWEEN POSITIVE CHARGE AND BREAKDOWN IN METAL-OXIDE-SILICON STRUCTURES [J].

WEINBERG, ZA ;

NGUYEN, TN .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) :1947-1956