FORMATION OF A NEW DEEP EMISSION IN SI+,S+,SE+, AND TE+ ION-IMPLANTED GAAS

被引：9

作者：

MAKITA, Y

TAKEUCHI, Y

NOMURA, T

TANAKA, H

KANAYAMA, T

TANOUE, H

IRIE, K

OHNISHI, N

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 05期

关键词：

D O I：

10.1063/1.97013

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：329 / 331

页数：3

共 10 条

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[7] NEW EMISSION-LINES IN HIGHLY CARBON ION-IMPLANTED GAAS [J].

MAKITA, Y ;

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[8] PHOTOLUMINESCENCE OF VERY DILUTELY C+ ION-IMPLANTED GAAS [J].

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[9] OBSERVATION OF NEW COMMON EMISSIONS IN GAAS PRODUCED BY ION-IMPLANTATION OF 4 ACCEPTOR IMPURITIES [J].

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