SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY FOR HIGH ELECTRON-MOBILITY TRANSISTOR IC APPLICATIONS

被引：6

作者：

HIYAMIZU, S

SAITO, J

KONDO, K

YAMAMOTO, T

ISHIKAWA, T

SASA, S

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 02期

关键词：

D O I：

10.1116/1.583186

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：585 / 587

页数：3

相关论文

共 14 条

[1] NEW TECHNOLOGY TOWARDS GAAS LSI VLSI FOR COMPUTER-APPLICATIONS
ABE, M
MIMURA, T
YOKOYAMA, N
ISHIKAWA, H
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1982, 30 (07) : 992 - 998
[2] HIGH MOBILITY OF TWO-DIMENSIONAL ELECTRONS AT THE GAAS-N-ALGAAS HETEROJUNCTION INTERFACE
HIYAMIZU, S
MIMURA, T
FUJII, T
NANB, K
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (09) : 805 - 807
[3] IMPROVED ELECTRON-MOBILITY HIGHER THAN 106 CM2/VS IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE
HIYAMIZU, S
SAITO, J
NANBU, K
ISHIKAWA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L609 - L611
[4] LOW-NOISE TWO-DIMENSIONAL ELECTRON-GAS FET
LAVIRON, M
DELAGEBEAUDEUF, D
DELESCLUSE, P
CHAPLART, J
LINH, NT
[J]. ELECTRONICS LETTERS, 1981, 17 (15) : 536 - 537
[5] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS
MIMURA, T
HIYAMIZU, S
FUJII, T
NANBU, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : L225 - L227
[6] Mimura T., 1983, International Electron Devices Meeting 1983. Technical Digest, P99
[7] NIORI M, 1983, ISSCC DIG TECH PAP I, V26, P198
[8] NISHIUCHI K, 1984, ISSCC, P48
[9] IMPURITY TRAPPING, INTERFACE STRUCTURE, AND LUMINESCENCE OF GAAS QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY
PETROFF, PM
MILLER, RC
GOSSARD, AC
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (02) : 217 - 219
[10] DEPENDENCE OF THE MOBILITY AND THE CONCENTRATION OF TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED GAAS/N-ALXGA1-XAS HETEROSTRUCTURE ON THE ALAS MOLE FRACTION
SAITO, J
NANBU, K
ISHIKAWA, T
HIYAMIZU, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (02): : L79 - L81