LESS HAZARDOUS MOCVD GROWTH OF INP USING SOLID RED-PHOSPHORUS AND H-2 PLASMA

被引：10

作者：

NAITOH, M

SOGA, T

JIMBO, T

UMENO, M

机构：

[1] Nagoya Inst of Technology, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

The authors would like to thank H. Uchiyama and K. Kamata for their assistance with the measurements. This work was partly supported by the Grant-in-Aid No. 62104001 for Special Project Research on Alloy Semiconductor Physics and Electronics from the Ministry of Education; Science and Culture of Japan;

D O I：

10.1016/0022-0248(88)90505-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

9

引用

收藏

页码：52 / 55

页数：4

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