PROCESS FOR GAAS MONOLITHIC INTEGRATION APPLIED TO GUNN-EFFECT LOGIC-CIRCUITS

被引：4

作者：

WADA, O ^{[1
]}

YANAGISAWA, S ^{[1
]}

TAKANASHI, H ^{[1
]}

机构：

[1] FUJITSU LABS LTD, NAKAHARA KU, KAWASAKI, JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 10期

关键词：

D O I：

10.1149/1.2132634

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：1546 / 1551

页数：6

相关论文

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