PROCESS FOR GAAS MONOLITHIC INTEGRATION APPLIED TO GUNN-EFFECT LOGIC-CIRCUITS

被引：4

作者：

WADA, O ^{[1
]}

YANAGISAWA, S ^{[1
]}

TAKANASHI, H ^{[1
]}

机构：

[1] FUJITSU LABS LTD, NAKAHARA KU, KAWASAKI, JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 10期

关键词：

D O I：

10.1149/1.2132634

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1546 / 1551

页数：6

共 22 条

[11]

NAKAMURA T, 1975, ISSCC DIGEST TECHNIC, P166

[12] CURRENT PULSES IN PLANAR GAAS GUNN DEVICES [J].

SCHLACHE.A ;

HESSE, E .

SOLID-STATE ELECTRONICS, 1974, 17 (06) :633-635

[13] EFFECT OF SURFACE TREATMENT ON GALLIUM ARSENIDE SCHOTTKY BARRIER DIODES [J].

SMITH, BL .

SOLID-STATE ELECTRONICS, 1968, 11 (04) :502-&

[14] HIGH-YIELD PHOTOLITHOGRAPHIC TECHNIQUE FOR SURFACE WAVE DEVICES [J].

SMITH, HI ;

BACHNER, FJ ;

EFREMOW, N .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (05) :821-&

[15] SCHOTTKY-GATE BULK EFFECT DIGITAL DEVICES [J].

SUGETA, T ;

YANAI, H ;

SEKIDO, K .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (11) :1629-&

[16] GAAS PLANAR GUNN DIODES FOR DC-BIASED OPERATION [J].

TAKEUCHI, M ;

SEKIDO, K ;

HIGASHISAKA, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (01) :125-+

[17] PREFERENTIAL ETCHING AND ETCHED PROFILE OF GAAS [J].

TARUI, Y ;

KOMIYA, Y ;

HARADA, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (01) :118-&

[18] FABRICATION OF 3-TERMINAL TRANSFERRED-ELECTRON LOGIC DEVICES BY PROTON-BOMBARDMENT FOR DEVICE ISOLATION [J].

UPADHYAYULA, LC ;

NARAYAN, SY ;

DOUGLAS, EC .

ELECTRONICS LETTERS, 1975, 11 (10) :201-202

[19] NEW FABRICATING METHOD OF PLANAR GUNN-EFFECT DEVICES AND INTEGRATED-CIRCUITS [J].

WADA, O ;

YANAGISAWA, S ;

TAKANASHI, H .

PROCEEDINGS OF THE IEEE, 1976, 64 (04) :566-568

[20] IMPROVED PHOTOLITHOGRAPHIC METHOD OF METALLIZATION APPLIED TO FABRICATION OF PLANAR GUNN-EFFECT DEVICES [J].

WADA, O ;

YANAGISAWA, S ;

TAKANASHI, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (03) :420-423

← 1 2 3 →