NEW FABRICATING METHOD OF PLANAR GUNN-EFFECT DEVICES AND INTEGRATED-CIRCUITS

被引：4

作者：

WADA, O ^{[1
]}

YANAGISAWA, S ^{[1
]}

TAKANASHI, H ^{[1
]}

机构：

[1] FUJITSU LABS LTD, NAKAHARA KU, KAWASAKI 211, JAPAN

来源：

PROCEEDINGS OF THE IEEE | 1976年 / 64卷 / 04期

关键词：

D O I：

10.1109/PROC.1976.10168

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：566 / 568

页数：3

共 6 条

[1]

BACHEM KH, 1974, JAP SOC APPL PHYS, V43, P222

[2] SELECTIVE ETCHING OF GALLIUM ARSENIDE CRYSTALS IN H2SO4-H2O2-H2O SYSTEM [J].

LIDA, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (05) :768-&

[3] GUNN DEVICE GIGABIT RATE DIGITAL MICROCIRCUITS [J].

MAUSE, K ;

SCHLACHETZKI, A ;

HESSE, E ;

SALOW, H .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1975, SC10 (01) :2-12

[4] CHARACTERISTICS AND APPLICATIONS OF A SCHOTTKY-BARRIER-GATE GUNN-EFFECT DIGITAL DEVICE [J].

SUGETA, T ;

TANIMOTO, M ;

IKOMA, T ;

YANAI, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (08) :504-515

[5] FABRICATION OF 3-TERMINAL TRANSFERRED-ELECTRON LOGIC DEVICES BY PROTON-BOMBARDMENT FOR DEVICE ISOLATION [J].

UPADHYAYULA, LC ;

NARAYAN, SY ;

DOUGLAS, EC .

ELECTRONICS LETTERS, 1975, 11 (10) :201-202

[6] EFFECT OF HEAT-TREATMENT ON AL-GAAS SCHOTTKY BARRIERS [J].

WADA, O ;

YANAGISAWA, S ;

TAKANASHI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (11) :1814-1815

← 1 →