STM OF LAYERED-STRUCTURE SEMICONDUCTORS

被引：13

作者：

HENSON, TD ^{[1
]}

SARID, D ^{[1
]}

BELL, LS ^{[1
]}

机构：

[1] UNIV ARIZONA,LUNAR & PLANETARY LAB,TUCSON,AZ 85721

来源：

JOURNAL OF MICROSCOPY-OXFORD | 1988年 / 152卷

关键词：

D O I：

10.1111/j.1365-2818.1988.tb01409.x

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

引用

页码：467 / 472

页数：6

共 20 条

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[16] THEORY AND APPLICATION FOR THE SCANNING TUNNELING MICROSCOPE [J].

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[17] OBSERVATION OF 2H-NBSE2 SURFACE BY SCANNING TUNNELING MICROSCOPY [J].

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[20] SCANNING TUNNELING MICROSCOPY INVESTIGATION OF 2H-MOS2 - A LAYERED SEMICONDUCTING TRANSITION-METAL DICHALCOGENIDE [J].

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