TRANSIENT CAPACITANCE STUDY OF ELECTRON TRAPS IN ALGAAS GROWN WITH AS-2

被引:17
作者
MOONEY, PM [1 ]
FISCHER, R [1 ]
MORKOC, H [1 ]
机构
[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
关键词
D O I
10.1063/1.334426
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:1928 / 1931
页数:4
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共 12 条
[1]   COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS [J].
CHAND, N ;
HENDERSON, T ;
KLEM, J ;
MASSELINK, WT ;
FISCHER, R ;
CHANG, YC ;
MORKOC, H .
PHYSICAL REVIEW B, 1984, 30 (08) :4481-4492
[2]   GROWTH OF AL0.3GA0.7AS BY MOLECULAR-BEAM EPITAXY IN THE FORBIDDEN TEMPERATURE-RANGE USING AS-2 [J].
ERICKSON, LP ;
MATTORD, TJ ;
PALMBERG, PW ;
FISCHER, R ;
MORKOC, H .
ELECTRONICS LETTERS, 1983, 19 (16) :632-633
[3]  
HIKOSAKA K, 1981, I PHYS C SER, V63, P233
[4]   INFLUENCE OF ARSENIC VAPOR SPECIES ON ELECTRICAL AND OPTICAL-PROPERTIES OF MBE GROWN GAAS [J].
JUNG, H ;
KUNZEL, H ;
PLOOG, K .
JOURNAL DE PHYSIQUE, 1982, 43 (NC-5) :135-143
[5]   STUDY OF ELECTRON TRAPS IN N-GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
LANG, DV ;
CHO, AY ;
GOSSARD, AC ;
ILEGEMS, M ;
WIEGMANN, W .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2558-2564
[6]   TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J].
LANG, DV ;
LOGAN, RA ;
JAROS, M .
PHYSICAL REVIEW B, 1979, 19 (02) :1015-1030
[7]   THE EFFECT OF SUBSTRATE GROWTH TEMPERATURE ON DEEP LEVELS IN NORMAL-ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
MCAFEE, SR ;
TSANG, WT ;
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) :6165-6167
[8]   CAPACITANCE TRANSIENT SPECTROSCOPY [J].
MILLER, GL ;
LANG, DV ;
KIMERLING, LC .
ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 :377-448
[9]   ENERGY-DEPENDENCE OF DEEP LEVEL INTRODUCTION IN ELECTRON-IRRADIATED GAAS [J].
PONS, D ;
MOONEY, PM ;
BOURGOIN, JC .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) :2038-2042
[10]   DONOR LEVELS IN SI-DOPED ALGAAS GROWN BY MBE [J].
WATANABE, MO ;
MORIZUKA, K ;
MASHITA, M ;
ASHIZAWA, Y ;
ZOHTA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (02) :L103-L105