A LOW-BARRIER SCHOTTKY PROCESS USING MOSI2

被引:2
作者
KAPOOR, AK
THOMAS, ME
VORA, MB
机构
关键词
D O I
10.1109/T-ED.1986.22567
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:772 / 778
页数:7
相关论文
共 14 条
[1]   REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SILICIDE SCHOTTKY DIODES [J].
ANDREWS, JM ;
LEPSELTER, MP .
SOLID-STATE ELECTRONICS, 1970, 13 (07) :1011-+
[2]   FORMATION OF SILICIDES IN MO-W BILAYER FILMS ON SI SUBSTRATES - MARKER EXPERIMENT [J].
BAGLIN, J ;
DEMPSEY, J ;
HAMMER, W ;
DHEURLE, F ;
PETERSSON, S ;
SERRANO, C .
JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (05) :641-661
[3]  
BINDELL JB, 1980, IEEE T ELECTRON DEV, V27, P420, DOI 10.1109/T-ED.1980.19878
[4]  
COHEN B, TECH B RES DEVICES I, V1
[5]  
COHEN BL, COMMUNICATION
[6]   REACTION-KINETICS OF MOLYBDENUM THIN-FILMS ON SILICON(111) SURFACE [J].
GUIVARCH, A ;
AUVRAY, P ;
BERTHOU, L ;
LECUN, M ;
BOULET, JP ;
HENOC, P ;
PELOUS, G ;
MARTINEZ, A .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (01) :233-237
[7]  
KAPOR AK, IEDM, V520, P81
[8]   REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J].
MURARKA, SP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04) :775-792
[9]  
MURARKA SP, 1983, SILICIDES VLSI APPLI, P14
[10]   REDUCING EFFECTIVE HEIGHT OF A SCHOTTKY-BARRIER USING LOW-ENERGY ION-IMPLANTATION [J].
SHANNON, JM .
APPLIED PHYSICS LETTERS, 1974, 24 (08) :369-371