EL-3 APPLICATION TO 0.5 MU-M SEMICONDUCTOR LITHOGRAPHY

被引：10

作者：

DAVIS, DE ^{[1
]}

GILLESPIE, SJ ^{[1
]}

SILVERMAN, SL ^{[1
]}

STICKEL, W ^{[1
]}

WILSON, AD ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 04期

关键词：

D O I：

10.1116/1.582662

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1003 / 1006

页数：4

共 11 条

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[2]

DAVIS DE, 1981, P MICROCIRCUIT ENG, P147

[3]

GILLESPIE S, 1982, ELECTROCHEMICAL SOC

[4]

GILLESPIE S, 1982, P MICROCIRCUIT ENG, P16

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KYSER, DF ;

PYLE, R .

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[7]

LANGNER GO, UNPUB

[8] EL-3 - A HIGH THROUGHPUT, HIGH-RESOLUTION E-BEAM LITHOGRAPHY TOOL [J].

MOORE, RD ;

CACCOMA, GA ;

PFEIFFER, HC ;

WEBER, EV ;

WOODARD, OC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :950-952

[9] NEW IMAGING AND DEFLECTION CONCEPT FOR PROBE-FORMING MICROFABRICATION SYSTEMS [J].

PFEIFFER, HC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06) :1170-1173

[10] VARIABLE SPOT SHAPING FOR ELECTRON-BEAM LITHOGRAPHY [J].

PFEIFFER, HC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (03) :887-890

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