SWIRL FORMATION OF DEFECTS IN CZOCHRALSKI-GROWN SILICON CRYSTAL

被引:8
作者
YASUAMI, S
OGINO, M
TAKASU, S
机构
[1] TOSHIBA LTD,CTR RES & DEV,KAWASAKI 210,JAPAN
[2] TOSHIBA LTD,TRANSISTOR WORKS,KAWASAKI 210,JAPAN
关键词
D O I
10.1016/0022-0248(77)90268-8
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:227 / 230
页数:4
相关论文
共 13 条
[1]   ETCH PITS OBSERVED IN DISLOCATION-FREE SILICON CRYSTALS [J].
ABE, T ;
SAMIZO, T ;
MARUYAMA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (05) :458-&
[2]  
AUTHIER A, 1970, MODERN DIFFRACTION I, P503
[3]   INFRARED SPECTROPHOTOMETRY FOR CARBON IN SILICON AS CALIBRATED BY CHARGED-PARTICLE ACTIVATION [J].
ENDO, Y ;
AKIYAMA, N ;
NOZAKI, T ;
YATSURUG.Y .
ANALYTICAL CHEMISTRY, 1972, 44 (14) :2258-&
[4]   FORMATION AND NATURE OF SWIRL DEFECTS IN SILICON [J].
FOLL, H ;
KOLBESEN, BO .
APPLIED PHYSICS, 1975, 8 (04) :319-331
[5]   NATURE OF SWIRLS AND ITS SIGNIFICANCE FOR UNDERSTANDING POINT-DEFECTS IN SILICON [J].
FOLL, H ;
KOLBESEN, BO ;
FRANK, W .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 29 (01) :K83-K87
[6]   OXYGEN CONTENT OF SILICON SINGLE CRYSTALS [J].
KAISER, W ;
KECK, PH .
JOURNAL OF APPLIED PHYSICS, 1957, 28 (08) :882-887
[9]   IMPURITY CLUSTERING EFFECTS ON ANOMALOUS TRANSMISSION OF X RAY IN SILICON [J].
PATEL, JR ;
BATTERMAN, BW .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (09) :2716-&
[10]   CHARACTERIZATION OF SWIRL DEFECTS IN FLOATING-ZONE SILICON-CRYSTALS [J].
PETROFF, PM ;
DEKOCK, AJR .
JOURNAL OF CRYSTAL GROWTH, 1975, 30 (01) :117-124