HIGH-POWER 60 GHZ MONOLITHIC GAAS IMPATT DIODES

被引：8

作者：

BAYRAKTAROGLU, B

SHIH, HD

机构：

[1] Texas Instruments Incorporated, Central Research Laboratories, Dallas, TX 75265, United States

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 10期

关键词：

INTEGRATED CIRCUITS; MONOLITHIC - SEMICONDUCTING GALLIUM ARSENIDE;

D O I：

10.1049/el:19860383

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Monolithic GaAs impatt diodes were developed as cw power sources at 60 GHz using double-drift flat-profile structures prepared by MBE. Two mesa-type diodes were employed to excite a microstrip resonator produced on the same chip as the diodes. The oscillation frequency was determined by the microstrip dimensions and the diode locations rather than by external circuitry. 1. 2 w was obtained at 60 GHz with 8. 5% efficiency, and a maximum efficiency of 10% was obtained at 58. 5 GHz with 1. 1 w output power without the use of diamond heat sinks.

引用

页码：562 / 563

页数：2

共 9 条

[1] GAAS IMPATT DIODES FOR 60 GHZ [J].