X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF THE CHEMICAL-STRUCTURE OF THERMALLY NITRIDED SIO2

被引：80

作者：

VASQUEZ, RP ^{[1
]}

HECHT, MH ^{[1
]}

GRUNTHANER, FJ ^{[1
]}

NAIMAN, ML ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 10期

关键词：

D O I：

10.1063/1.94614

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：969 / 971

页数：3

共 23 条

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[7] LOCAL ATOMIC AND ELECTRONIC-STRUCTURE OF OXIDE-GAAS AND SIO2-SI INTERFACES USING HIGH-RESOLUTION XPS [J].

GRUNTHANER, FJ ;

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[9] THERMAL NITRIDATION OF SILICON DIOXIDE FILMS [J].

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[10]

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