CLEANING CHEMISTRY OF INSB(100) MOLECULAR-BEAM EPITAXY SUBSTRATES

被引：21

作者：

VASQUEZ, RP

LEWIS, BF

GRUNTHANER, FJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 03期

关键词：

D O I：

10.1063/1.332158

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1365 / 1368

页数：4

共 20 条

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APPLIED PHYSICS LETTERS, 1981, 39 (04) :316-318

[2] SYNTHESIS OF STOICHIOMETRIC INSB THIN-FILMS BY A SIMPLE MOLECULAR-BEAM TECHNIQUE [J].

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[3] MORPHOLOGICAL DEFECTS ARISING DURING MBE GROWTH OF GAAS [J].

BACHRACH, RZ ;

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03) :756-764

[4] DEPENDENCE OF RESIDUAL DAMAGE ON TEMPERATURE DURING AR+ SPUTTER CLEANING OF SILICON [J].

BEAN, JC ;

BECKER, GE ;

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SEIDEL, TE .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) :907-913

[5] THE GROWTH OF METASTABLE, HETERO-EPITAXIAL FILMS OF ALPHA-SN BY METAL BEAM EPITAXY [J].

FARROW, RFC ;

ROBERTSON, DS ;

WILLIAMS, GM ;

CULLIS, AG ;

JONES, GR ;

YOUNG, IM ;

DENNIS, PNJ .

JOURNAL OF CRYSTAL GROWTH, 1981, 54 (03) :507-518

[6] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH STRUCTURAL PERFECTION, HETERO-EPITAXIAL CDTE-FILMS ON INSB (001) [J].

FARROW, RFC ;

JONES, GR ;

WILLIAMS, GM ;

YOUNG, IM .

APPLIED PHYSICS LETTERS, 1981, 39 (12) :954-956

[7] LOCAL ATOMIC AND ELECTRONIC-STRUCTURE OF OXIDE-GAAS AND SIO2-SI INTERFACES USING HIGH-RESOLUTION XPS [J].

GRUNTHANER, FJ ;

GRUNTHANER, PJ ;

VASQUEZ, RP ;

LEWIS, BF ;

MASERJIAN, J ;

MADHUKAR, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1443-1453

[8] CHEMICAL DEPTH PROFILES OF THE GAAS-NATIVE OXIDE INTERFACE [J].

GRUNTHANER, PJ ;

VASQUEZ, RP ;

GRUNTHANER, FJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :1045-1051

[9] COMPARISON OF LOW-TEMPERATURE OXIDES ON POLYCRYSTALLINE INP BY AES, SIMS AND XPS [J].

KAZMERSKI, LL ;

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CHU, SS ;

LIN, CL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :1061-1066

[10] GROWTH OF SB AND INSB BY MOLECULAR-BEAM EPITAXY [J].

NOREIKA, AJ ;

FRANCOMBE, MH ;

WOOD, CEC .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) :7416-7420

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