EFFECT OF INTERFACE ROUGHNESS AND SCATTERING ON THE PERFORMANCE OF ALAS/INGAAS RESONANT-TUNNELING DIODES

被引：7

作者：

FORSTER, A ^{[1
]}

LANGE, J ^{[1
]}

GERTHSEN, D ^{[1
]}

DIEKER, C ^{[1
]}

LUTH, H ^{[1
]}

机构：

[1] FORSCHUNGSZENTRUM JULICH,INST FESTKORPERFORSCH,W-5170 JULICH,GERMANY

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 04期

关键词：

D O I：

10.1116/1.586473

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of the indium concentration on the quality of the AlAs/InGaAs interfaces in resonant tunneling diodes is studied. It is shown by high-resolution transmission electron microscopy that the interface quality of the normal interface (AlAs on InGaAs) nearly achieves even at low growth temperatures T(G) = 500-degrees-C the quality of the corresponding AlAs/GaAs interface at the optimum substrate temperature. The improvement in the interface quality and the higher potential barrier in the InGaAs system leads to higher peak-to-valley ratios (PVRs) of the diode relative to that in the GaAs system. In addition, current-voltage characteristics of resonant tunneling diodes are calculated as an integral over the transmission coefficient and the supply function. Scattering effects are included by folding the transmission probability with a Lorentzian. The theoretical simulations give further insight into the physics of the diodes.

引用

页码：1743 / 1747

页数：5

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