OBSERVATION OF BORON-RELATED PHOTOLUMINESCENCE IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：14

作者：

BRIERLEY, SK

HENDRIKS, HT

HOKE, WE

LEMONIAS, PJ

WEIR, DG

机构：

[1] Raytheon Research Division, 131 Spring Street, Lexington

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 06期

关键词：

D O I：

10.1063/1.109916

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Boron-doped GaAs films grown by molecular beam epitaxy have been studied by photoluminescence. Two boron-related peaks have been observed in the spectra. The temperature dependence of these peaks is characteristic of acceptor levels, and a quantitative analysis yields activation energies of 71-72 and 188 meV. While the peak with the lower activation energy can be assigned with some confidence to the B(As)0/- level, the second peak may be due to a B(As)-Si(Ga) complex rather than the B(As)-/-- level.

引用

收藏

页码：812 / 814

页数：3

相关论文

共 16 条

[1] GAAS AND BAS ANTISITE DEFECTS IN GALLIUM-ARSENIDE [J].

ADDINALL, R ;

NEWMAN, RC .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (07) :1005-1007

[2] EXISTENCE OF DEEP ACCEPTORS IN GA-IMPLANTED AND B-IMPLANTED GAAS AFTER CLOSE-CONTACT ANNEALING [J].

DANSAS, P .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (06) :2212-2216

[3] OPTICAL ABSORPTION AND RECOMBINATION RADIATION IN SEMICONDUCTORS DUE TO TRANSITIONS BETWEEN HYDROGEN-LIKE ACCEPTOR IMPURITY LEVELS AND THE CONDUCTION BAND [J].

EAGLES, DM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (1-2) :76-83

[4] INFRARED-ABSORPTION OF THE 78-MEV ACCEPTOR IN GAAS [J].

ELLIOTT, KR ;

HOLMES, DE ;

CHEN, RT ;

KIRKPATRICK, CG .

APPLIED PHYSICS LETTERS, 1982, 40 (10) :898-901

[5] INTERACTION BETWEEN BORON AND INTRINSIC DEFECTS IN GAAS [J].

ELLIOTT, KR .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3856-3858

[6] RESIDUAL DOUBLE ACCEPTORS IN BULK GAAS [J].

ELLIOTT, KR .

APPLIED PHYSICS LETTERS, 1983, 42 (03) :274-276

[7] DIRECT EVIDENCE FOR THE EXISTENCE OF BAS IMPURITY ANTISITE CENTERS IN GAAS [J].

GLEDHILL, GA ;

NEWMAN, RC ;

WOODHEAD, J .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (11) :L301-L304

[8] MOLECULAR-BEAM EPITAXIAL-GROWTH OF BORON-DOPED GAAS FILMS [J].

HOKE, WE ;

LEMONIAS, PJ ;

WEIR, DG ;

HENDRIKS, HT .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03) :902-904

[9] PROPERTIES OF THE 78 MEV ACCEPTOR IN GAAS [J].

MOORE, WJ ;

HAWKINS, RL ;

SHANABROOK, BV .

PHYSICA B & C, 1987, 146 (1-2) :65-74

[10] STUDIES OF BORON ON THE ARSENIC SITE IN ELECTRON-IRRADIATED GAAS [J].

MOORE, WJ ;

HAWKINS, RL .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (12) :5699-5702