CATION AND ANION TRANSPORT NUMBERS IN ANODIC GAAS OXIDES

被引:15
作者
FISCHER, CW
CANADAY, JD
机构
关键词
D O I
10.1149/1.2120073
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:1740 / 1744
页数:5
相关论文
共 26 条
[1]   REDUCTION OF FAST SURFACE-STATES ON P-TYPE GAAS [J].
AHRENKIEL, RK ;
WAGNER, RS ;
PATTILLO, S ;
DUNLAVY, D ;
JERVIS, T ;
KAZMERSKI, LL ;
IRELAND, PJ .
APPLIED PHYSICS LETTERS, 1982, 40 (08) :700-703
[2]   ASSESSMENT OF THE QUALITY OF ANODIC NATIVE OXIDES OF GAAS FOR MOS DEVICES [J].
BREEZE, PA ;
HARTNAGEL, HL .
THIN SOLID FILMS, 1979, 56 (1-2) :51-61
[3]   USE OF RUTHERFORD BACKSCATTERING TO STUDY BEHAVIOR OF ION-IMPLANTED ATOMS DURING ANODIC-OXIDATION OF ALUMINUM - AR, KR, XE, K, RB, CS, CL, BR, AND I [J].
BROWN, F ;
MACKINTOSH, WD .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (08) :1096-1102
[4]   ANODIC OXIDE ON GAAS - QUANTITATIVE CHEMICAL DEPTH PROFILES OBTAINED USING AUGER-SPECTROSCOPY AND NEUTRON-ACTIVATION ANALYSIS [J].
CHANG, CC ;
SCHWARTZ, B ;
MURARKA, SP .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (06) :922-926
[5]  
CHRISTY SS, 1981, J ELCHEM SO, V128, P2170
[6]  
Chu WK., 1978, BACKSCATTERING SPECT
[7]   MECHANISM OF GAAS ANODIZATION [J].
COLEMAN, DJ ;
SHAW, DW ;
DOBROTT, RD .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (02) :239-241
[9]   GALVANOSTATIC ANODIZATION OF GAAS IN METHANOLIC KOH [J].
FISCHER, CW ;
CANADAY, JD .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (05) :1016-1021
[10]   ANODIC OXIDE-GAAS AND INP INTERFACE FORMATION [J].
GEIB, KM ;
WILMSEN, CW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :952-957