INTERFACE-TRAP EFFECT ON GATE INDUCED DRAIN LEAKAGE CURRENT IN SUBMICRON N-MOSFETS

被引：8

作者：

WANG, TH ^{[1
]}

HUANG, CM ^{[1
]}

CHANG, TE ^{[1
]}

CHOU, JW ^{[1
]}

CHANG, CY ^{[1
]}

机构：

[1] NATL NANO DEVICE LAB,HSINCHU,TAIWAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 12期

关键词：

D O I：

10.1109/16.337468

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An interface trap assisted tunneling mechanism which includes hole tunneling from interface traps to the valence band and electron tunneling from interface traps to the conduction band is presented to model the drain leakage current in a 0.5 mu m LATID N-MOSFET. In experiment, the interface traps were generated by hot carrier stress, The increased drain leakage current due to the band-trap-band tunneling can be adequately described by an analytical expression of Delta I-d = A exp(-Bit/F) with a value of B-it of 13 MV/cm, which is much lower than that (36 MV/cm) of direct band-to-band tunneling.

引用

页码：2475 / 2477

页数：3

共 10 条

[1]

CHAN TY, 1987, IEDM, P721

[2] SUB-BREAKDOWN DRAIN LEAKAGE CURRENT IN MOSFET [J].