3-MM DOUBLE-HETEROJUNCTION MICROWAVE-POWER HEMT FABRICATED BY SELECTIVE RIE

被引：5

作者：

VANHOVE, JM

SCHUELKE, RJ

THOMES, GP

JORGENSON, JD

CHANG, EY

NAGARAJAN, RM

PANDE, KP

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 10期

关键词：

D O I：

10.1109/55.17834

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：530 / 532

页数：3

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