SPACE-CHARGE LIMITATIONS OF TUNNELING RESONANCES

[1] RESONANT TUNNELING IN GAAS/AIAS HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1985, 46 (03) : 285 - 287

[2] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 593 - 595

[3] QUANTUM EFFECTS IN ACCUMULATION LAYERS OF SI-SIO2 INTERFACES IN THE WKB EFFECTIVE MASS APPROXIMATION [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1985, 132 (01): : 153 - 163

[4] PHYSICS OF RESONANT TUNNELING - THE ONE-DIMENSIONAL DOUBLE-BARRIER CASE [J]. PHYSICAL REVIEW B, 1984, 29 (04): : 1970 - 1981

[5] RICCO B, COMMUNICATION

[6] RESONANT TUNNELING THROUGH QUANTUM WELLS AT FREQUENCIES UP TO 2.5 THZ [J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 588 - 590

[7] TUNNELING OF ELECTRONS FROM SI INTO THERMALLY GROWN SIO2 [J]. SOLID-STATE ELECTRONICS, 1977, 20 (01) : 11 - 18

[1] RESONANT TUNNELING IN GAAS/AIAS HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1985, 46 (03) : 285 - 287

[2] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 593 - 595

[3] QUANTUM EFFECTS IN ACCUMULATION LAYERS OF SI-SIO2 INTERFACES IN THE WKB EFFECTIVE MASS APPROXIMATION [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1985, 132 (01): : 153 - 163

[4] PHYSICS OF RESONANT TUNNELING - THE ONE-DIMENSIONAL DOUBLE-BARRIER CASE [J]. PHYSICAL REVIEW B, 1984, 29 (04): : 1970 - 1981

[5] RICCO B, COMMUNICATION

[6] RESONANT TUNNELING THROUGH QUANTUM WELLS AT FREQUENCIES UP TO 2.5 THZ [J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 588 - 590

[7] TUNNELING OF ELECTRONS FROM SI INTO THERMALLY GROWN SIO2 [J]. SOLID-STATE ELECTRONICS, 1977, 20 (01) : 11 - 18