SITE EXCHANGE MECHANISM IN SURFACTANT-MEDIATED EPITAXIAL-GROWTH

被引：66

作者：

OHNO, T

机构：

[1] NTT LSI Laboratories, Atsugi-shi

来源：

PHYSICAL REVIEW LETTERS | 1994年 / 73卷 / 03期

关键词：

D O I：

10.1103/PhysRevLett.73.460

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The energetics of site exchange in surfactant-mediated epitaxial growth is investigated using first-principles calculations for the homoepitaxy of Si/Si(001) with an As monolayer. We find that the interaction between Si dimers on the As-terminated Si(001) surface repels the Si dimers from each other and initiates site exchange between the top-layer Si atoms and the second-layer As atoms. The origin of the site exchange is the second-layer rebonding in the resulting geometries. These chemical effects of the As surfactant prevent Si islanding; this is also valid for Ge/Si heteroepitaxy.

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页码：460 / 463

页数：4

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