DIVACANCY BINDING ENTHALPY AND CONTRIBUTION OF DIVACANCIES TO SELF-DIFFUSION IN SI

被引：76

作者：

VANVECHTEN, JA ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.33.2674

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2674 / 2689

页数：16

共 68 条

[1] ELECTRON-PARAMAGNETIC-RESONANCE DETECTION OF OPTICALLY INDUCED DIVACANCY ALIGNMENT IN SILICON [J].

AMMERLAAN, CA ;

WATKINS, GD .

PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (10) :3988-+

[2]

ARIFOV PU, 1979, SOV PHYS SEMICOND+, V13, P914

[3]

ARIFOV PU, 1978, SOV PHYS SEMICOND+, V12, P525

[4] THEORY OF THE SILICON VACANCY - AN ANDERSON NEGATIVE-U SYSTEM [J].

BARAFF, GA ;

KANE, EO ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1980, 21 (12) :5662-5686

[5] SIMPLE PARAMETRIZED MODEL FOR JAHN-TELLER SYSTEMS - VACANCY IN P-TYPE SILICON [J].

BARAFF, GA ;

KANE, EO ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1980, 21 (08) :3563-3570

[6] SILICON VACANCY - POSSIBLE ANDERSON NEGATIVE-U SYSTEM [J].

BARAFF, GA ;

KANE, EO ;

SCHLUTER, M .

PHYSICAL REVIEW LETTERS, 1979, 43 (13) :956-959

[7] EFFECTIVE MASS AND INTRINSIC CONCENTRATION IN SILICON [J].

BARBER, HD .

SOLID-STATE ELECTRONICS, 1967, 10 (11) :1039-&

[8]

BARYAM Y, 1985, J ELECTRON MATER A, V14, P261

[9] POSITRON DYNAMICS IN SOLIDS [J].

BRANDT, W .

APPLIED PHYSICS, 1974, 5 (01) :1-23

[10] MICROSCOPIC THEORY OF IMPURITY-DEFECT REACTIONS AND IMPURITY DIFFUSION IN SILICON [J].

CAR, R ;

KELLY, PJ ;

OSHIYAMA, A ;

PANTELIDES, ST .

PHYSICAL REVIEW LETTERS, 1985, 54 (04) :360-363

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