CONTACTLESS ELECTROREFLECTANCE STUDY OF TEMPERATURE-DEPENDENCE OF FUNDAMENTAL-BAND GAP OF ZNSE

被引：3

作者：

KRYSTEK, W

MALIKOVA, L

POLLAK, FH

TAMARGO, MC

DAI, N

ZENG, L

CAVUS, A

机构：

[1] CUNY BROOKLYN COLL,NEW YORK STATE CTR ADV TECHNOL ULTRAFAST PHOTON M,BROOKLYN,NY 11210

[2] CUNY CITY COLL,DEPT CHEM,NEW YORK,NY 10031

[3] CUNY CITY COLL,NEW YORK STATE CTR ADV TECHNOL ULTRAFAST PHOTON M,NEW YORK,NY 10031

来源：

ACTA PHYSICA POLONICA A | 1995年 / 88卷 / 05期

关键词：

D O I：

10.12693/APhysPolA.88.1013

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report a systematic study of the temperature variation of the energy [E(0)(T)] and broadening parameter [Gamma(0)(T)] of the fundamental band gap of ZnSe in the range 27 K < T < 370 K using contactless electroreflectance. The obtained values of E(0)(T) and Gamma(0)(T) have been fit to various semi-empirical expressions to obtain information about the exciton-phonon coupling in this system. The experimentally determined E(0)(T) also is of significance for technological applications since it can be used to determine the operating temperature of ZnSe-based devices such as quantum well lasers.

引用

页码：1013 / 1017

页数：5

共 11 条

[1] THIRD-DERIVATIVE MODULATION SPECTROSCOPY WITH LOW-FIELD ELECTROREFLECTANCE [J].