LOW-PRESSURE MOVPE GROWTH OF SN-DOPED GAAS

被引：12

作者：

ROTH, AP

YAKIMOVA, R

SUNDARAM, VS

机构：

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 25-2期

关键词：

D O I：

10.1049/el:19830721

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1062 / 1064

页数：3

共 10 条

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[6]

PERSONS JD, 1983, J ELECTROCHEM SOC, V33, P1780

[7]

PLOG K, 1979, J VAC SCI TECHNOL, V16, P838

[8] RESIDUAL SHALLOW ACCEPTORS IN GAAS-LAYERS GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY [J].

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JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5350-5357

[9] ELECTRON-MOBILITY IN N-TYPE GAAS AT 77-K - DETERMINATION OF THE COMPENSATION RATIO [J].

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[10] TIN-DOPING EFFECTS IN GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J].

WOOD, CEC ;

JOYCE, BA .

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