A MODEL FOR THE RELATION BETWEEN SUBSTRATE AND GATE CURRENTS IN N-CHANNEL MOSFETS

被引：12

作者：

TANAKA, S

WATANABE, S

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 06期

关键词：

D O I：

10.1109/T-ED.1983.21187

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：668 / 675

页数：8

共 29 条

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