THEORETICAL CHARACTERISTICS OF INSULATED GATE FIELD EFFECT DEVICES

被引：5

作者：

JUND, C

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(65)90114-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：375 / &

共 8 条

[1]

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[5]

JUND C, TO BE PUBLISHED

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[8] A UNIPOLAR FIELD-EFFECT TRANSISTOR [J].

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