CHEMICAL BONDING FEATURES OF FLUORINE AND BORON IN BF2+-ION-IMPLANTED SI

被引：13

作者：

KINOSHITA, T ^{[1
]}

TAKAKURA, M ^{[1
]}

MIYAZAKI, S ^{[1
]}

YOKOYAMA, S ^{[1
]}

KOYANAGI, M ^{[1
]}

HIROSE, M ^{[1
]}

机构：

[1] HIROSHIMA UNIV, INTEGRATED SYST RES CTR, HIROSHIMA 724, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 12期

关键词：

BF2+ IMPLANTATION; CHEMICAL BONDING STATE; X-RAY PHOTO-ELECTRON SPECTROSCOPY; INFRARED ABSORPTION; RAMAN SCATTERING;

D O I：

10.1143/JJAP.29.L2349

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The chemical bonding configuration of fluorine and boron atoms in a BF2+-ion-implanted Si network have been studied by using X-ray photoelectron spectroscopy, infrared absorption and Raman scattering measurements. It is concluded that fluorine atoms in as-implanted Si are mainly incorporated as BF bonds. By annealing at 900-degrees-C, the BF bonds are thermally decomposed to form four fold-coordinated acceptors as well as thermodynamically stable SiF(x) bonds (x = 2, 3) in the matrix.

引用

页码：L2349 / L2352

页数：4

共 12 条

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