LUMINESCENT PROPERTIES OF VISIBLE AND NEAR-INFRARED EMISSIONS FROM POROUS SILICON PREPARED BY THE ANODIZATION METHOD

被引：44

作者：

MOCHIZUKI, Y

MIZUTA, M

OCHIAI, Y

MATSUI, S

OHKUBO, N

机构：

[1] Fundamental Research Laboratories, NEC Corporation, Tsukuba, Ibaraki 305

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.46.12353

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Luminescent properties of anodized porous Si are experimentally investigated. An extremely long decay time together with a peculiar temperature dependence due to the competing Auger process are observed for the visible luminescence band indicating an analogous recombination mechanism to that of electron-hole pairs being trapped at spatially separated tail states in a-Si:H. Besides this visible luminescence, an intense emission is also detected in the infrared region around 1.1 eV. Its decay time is shorter than that of the visible band and possible recombination mechanisms are discussed.

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页码：12353 / 12357

页数：5

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