A NOVEL TECHNIQUE FOR DIAMOND FILM DEPOSITION USING SURFACE-WAVE DISCHARGES

被引：38

作者：

BORGES, CFM ^{[1
]}

MOISAN, M ^{[1
]}

GICQUEL, A ^{[1
]}

机构：

[1] UNIV PARIS 13,INGN MAT & HAUTES PRESS LAB,CNRS,F-93430 VILLETANEUSE,FRANCE

来源：

关键词：

DIAMOND; GAS PHASE REACTOR; MICROWAVE PLASMA CVD; GROWTH;

D O I：

10.1016/0925-9635(94)00237-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Surface-wave-sustained discharges are utilized in a non-conventional configuration to yield plasma with a hemispherical shape for diamond film deposition at gas pressures in the range 1-60 Torr. Compared with microwave-sustained plasma balls in ''bell jar'' reactors, microwave power absorption is more efficient: no power is left that would heat the substrate and, for given power to the reactor and gas conditions, higher power densities are obtained in the plasma. The roughness of the deposit decreases with increasing power density. Deposition rate on 4 cm(2) is typically 350 mu g cm(-2) h(-1).

引用

页码：149 / 154

页数：6

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