PHOTOREFLECTANCE STUDY OF FERMI LEVEL CHANGES IN PHOTOWASHED GAAS

被引：30

作者：

SHEN, H

POLLAK, FH

WOODALL, JM

机构：

[1] CUNY BROOKLYN COLL,DEPT PHYS,BROOKLYN,NY 11210

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[3] CUNY GRAD SCH & UNIV CTR,NEW YORK,NY 10036

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 03期

关键词：

D O I：

10.1116/1.585036

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：413 / 415

页数：3

共 20 条

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[5] CONTROL OF FERMI LEVEL PINNING AND RECOMBINATION PROCESSES AT GAAS-SURFACES BY CHEMICAL AND PHOTOCHEMICAL TREATMENTS
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[6] OXIDE PASSIVATION OF PHOTOCHEMICALLY UNPINNED GAAS
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[7] MADELUNG O, 1982, LANDBOLTBORNSTEIN A, V17
[8] UNPINNED (100) GAAS-SURFACES IN AIR USING PHOTOCHEMISTRY
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[J]. APPLIED PHYSICS LETTERS, 1986, 48 (07) : 475 - 477
[9] PHOTOREFLECTANCE LINE SHAPE AT FUNDAMENTAL EDGE IN ULTRAPURE GAAS
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[J]. PHYSICAL REVIEW B, 1970, 2 (04): : 803 - &
[10] NEW NORMALIZATION PROCEDURE FOR MODULATION SPECTROSCOPY
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