EXCITATION SPECTRUM OF BISMUTH DONORS IN SILICON

[11] HIGHER DONOR EXCITED STATES FOR PROLATE-SPHEROID CONDUCTION BANDS - A REEVALUATION OF SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1969, 184 (03): : 713 - &

[12] FISHER P, 1969, PHYSICS SOLID STATE, P149

[13] LINE BROADENING OF IMPURITY STATES BY RESONANT PHONON INTERACTIONS [J]. PHYSICAL REVIEW, 1968, 170 (03): : 749 - +

[14] EXCITATION-SPECTRA AND PIEZOSPECTROSCOPIC EFFECTS OF MAGNESIUM DONORS IN SILICON [J]. PHYSICAL REVIEW B, 1972, 5 (02): : 462 - &

[15] EFFECT OF UNIAXIAL STRESS ON 2-PHONON LATTICE ABSORPTION BANDS OF SILICON [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1966, 88 (560P): : 437 - &

[16] ABSORPTION SPECTRUM OF BISMUTH-DOPED SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 4 (04) : 315 - 317

[17] INFRARED ABSORPTION OF OXYGEN IN SILICON [J]. PHYSICAL REVIEW, 1957, 107 (04): : 966 - 972

[18] EVIDENCE FOR INTERNAL ROTATION IN THE FINE STRUCTURE OF THE INFRARED ABSORPTION OF OXYGEN IN SILICON [J]. JOURNAL OF CHEMICAL PHYSICS, 1960, 33 (04) : 980 - 990

[19] LATTICE ABSORPTION BANDS IN SILICON [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1959, 73 (470): : 265 - 272

[20] EVEN-PARITY LEVELS OF DONORS IN SI [J]. PHYSICAL REVIEW LETTERS, 1970, 25 (21) : 1490 - &

[11] HIGHER DONOR EXCITED STATES FOR PROLATE-SPHEROID CONDUCTION BANDS - A REEVALUATION OF SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1969, 184 (03): : 713 - &

[12] FISHER P, 1969, PHYSICS SOLID STATE, P149

[13] LINE BROADENING OF IMPURITY STATES BY RESONANT PHONON INTERACTIONS [J]. PHYSICAL REVIEW, 1968, 170 (03): : 749 - +

[14] EXCITATION-SPECTRA AND PIEZOSPECTROSCOPIC EFFECTS OF MAGNESIUM DONORS IN SILICON [J]. PHYSICAL REVIEW B, 1972, 5 (02): : 462 - &

[15] EFFECT OF UNIAXIAL STRESS ON 2-PHONON LATTICE ABSORPTION BANDS OF SILICON [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1966, 88 (560P): : 437 - &

[16] ABSORPTION SPECTRUM OF BISMUTH-DOPED SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 4 (04) : 315 - 317

[17] INFRARED ABSORPTION OF OXYGEN IN SILICON [J]. PHYSICAL REVIEW, 1957, 107 (04): : 966 - 972

[18] EVIDENCE FOR INTERNAL ROTATION IN THE FINE STRUCTURE OF THE INFRARED ABSORPTION OF OXYGEN IN SILICON [J]. JOURNAL OF CHEMICAL PHYSICS, 1960, 33 (04) : 980 - 990

[19] LATTICE ABSORPTION BANDS IN SILICON [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1959, 73 (470): : 265 - 272

[20] EVEN-PARITY LEVELS OF DONORS IN SI [J]. PHYSICAL REVIEW LETTERS, 1970, 25 (21) : 1490 - &