SILICON AVALANCHE DIODES AS DETECTORS FOR GAMMA RADIATION

被引:4
作者
KEIL, G
机构
[1] Institut für Technische Elektronik der Technischen Hochschule München, Munich
来源
NUCLEAR INSTRUMENTS & METHODS | 1968年 / 65卷 / 03期
关键词
D O I
10.1016/0029-554X(68)90105-5
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
A semiconductor gamma detector is described which can be considered the solid-state analogue of the Geiger-Müller counter. The detector is an alloyed silicon diode operated in its breakdown region. Gamma detection occurs by diffusion of minority carriers from the ionization track of the fast electron to the avalanche channel, where a breakdown pulse is triggered (typical pulse height: 25 μA). The small counting volume in connection with a thermally produced background" pulse-rate establishes a lower limit of measurable dose rates at about 20 rad/h. The usable range of dose rates can embrace 5 decades. Calculations and experimental data of the energy dependence are presented. © 1968."
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页码:277 / &
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