LASER PROCESSING OF TUNGSTEN FROM WF6 AND SIH4

被引：3

作者：

MEUNIER, M ^{[1
]}

DESJARDINS, P ^{[1
]}

TABBAL, M ^{[1
]}

ELYAAGOUBI, N ^{[1
]}

IZQUIERDO, R ^{[1
]}

YELON, A ^{[1
]}

机构：

[1] ECOLE POLYTECH,DEPT GENIE PHYS,MONTREAL,PQ H3C 3A7,CANADA

来源：

APPLIED SURFACE SCIENCE | 1995年 / 86卷 / 1-4期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1016/0169-4332(94)00455-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Low temperature laser processing of W using WF6 and SiH4 is discussed. This process can be applied with limited thermal budget to various substrates, giving the possibility of depositing thin films on fragile substrates like polyimide or GaAs. In a direct writing mode, an Ar+ laser and a diode laser have been used to produce WSix with various controlled line profiles on polyimide and TiN. Best resistivities are between 40 and 80 mu Omega.cm and the composition W/Si vary from 1.4 to 1.8. Excimer laser induced deposition of W on GaAs far making Schottky contacts has also been investigated. This process yields pure alpha-W deposits with resistivities of 20 mu Omega.cm.

引用

页码：475 / 483

页数：9

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