THERMAL-DIFFUSION OF PT IN SILICON FROM PTSI

被引：24

作者：

MANTOVANI, S ^{[1
]}

NAVA, F ^{[1
]}

NOBILI, C ^{[1
]}

CONTI, M ^{[1
]}

PIGNATEL, G ^{[1
]}

机构：

[1] SGS, I-20041 AGRATE, ITALY

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 03期

关键词：

D O I：

10.1063/1.94742

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：328 / 330

页数：3

共 25 条

[1]

BAILEY RF, 1969, ELECTROCHEM SOC, P481

[2] PHOTOIONIZATION CROSS-SECTIONS IN PLATINUM-DOPED SILICON [J].

BRAUN, S ;

GRIMMEISS, HG ;

SPANN, K .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) :3883-3887

[3] ELECTRICAL-PROPERTIES OF PLATINUM IN SILICON [J].

BROTHERTON, SD ;

BRADLEY, P ;

BICKNELL, J .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3396-3403

[4] MEASUREMENT OF DEEP-LEVEL SPATIAL DISTRIBUTIONS [J].

BROTHERTON, SD .

SOLID-STATE ELECTRONICS, 1976, 19 (04) :341-342

[5] ELECTRICAL PROPERTIES OF SILICON DOPED WITH PLATINUM [J].

CARCHANO, H ;

JUND, C .

SOLID-STATE ELECTRONICS, 1970, 13 (01) :83-&

[6]

CHARLOT JJ, 1970, CR ACAD SCI B PHYS, V270, P609

[7]

CHARLOT JJ, 1970, CR ACAD SCI B PHYS, V270, P1488

[8]

Conti M., 1971, Alta Frequenza, V40, P544

[9] ELECTRICAL-PROPERTIES OF PLATINUM IN SILICON AS DETERMINED BY DEEP-LEVEL TRANSIENT SPECTROSCOPY [J].

EVWARAYE, AO ;

SUN, E .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) :3172-3176

[10] DIFFUSION OF GOLD IN SILICON - A NEW MODEL [J].

GOSELE, U ;

MOREHEAD, F ;

FRANK, W ;

SEEGER, A .

APPLIED PHYSICS LETTERS, 1981, 38 (03) :157-159

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