MICROSTRUCTURE OF ALN ON SI (111) GROWN BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY

被引：85

作者：

STEVENS, KS ^{[1
]}

OHTANI, A ^{[1
]}

KINNIBURGH, M ^{[1
]}

BERESFORD, R ^{[1
]}

机构：

[1] BROWN UNIV,CTR ADV MAT RES,PROVIDENCE,RI 02912

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 03期

关键词：

D O I：

10.1063/1.112359

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have grown monocrystalline AlN on Si (111) substrates over the temperature range 550-900-degrees-C using electron cyclotron resonance plasma assisted molecular beam epitaxy. The best (0002) peak omega rocking curve full width at half-maximum value obtained was 26 min for a film deposited at 900-degrees-C. All films nominally displayed the AlN[0001] parallel-to Si[111] orientation. The exact angle between AlN[0001] and Si[111] decreased from 2.1-degrees to 1.1-degrees and the (0002) peak widths improved with increasing substrate temperature. Mosaic-type disorder was shown by high resolution x-ray diffraction to be the dominant cause of the omega rocking curve peak full widths.

引用

页码：321 / 323

页数：3

共 22 条

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