SPUTTER DEPTH PROFILING OF MICROELECTRONIC STRUCTURES

被引：44

作者：

ZINNER, E

机构：

[1] VIENNA TECH UNIV, INST ALLGEMEINE ELEKTROTECH & ELEKTR, A-1040 VIENNA, AUSTRIA

[2] VIENNA TECH UNIV, INST ANALYT CHEM, A-1040 VIENNA, AUSTRIA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 05期

关键词：

D O I：

10.1149/1.2119926

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C199 / C222

页数：24

共 601 条

[1] COMPLEX REFRACTIVE-INDEX AND PHOSPHORUS CONCENTRATION PROFILES IN P-31(+) ION-IMPLANTED SILICON BY ELLIPSOMETRY AND AUGER-ELECTRON SPECTROSCOPY [J].

ADAMS, JR .

SURFACE SCIENCE, 1976, 56 (01) :307-315

[2] RADIATION EFFECTS ON SOLID-STATE DIFFUSION [J].

ADDA, Y ;

BEYELER, M ;

BREBEC, G .

THIN SOLID FILMS, 1975, 25 (01) :107-156

[3] ELECTRON-BEAM EFFECTS IN DEPTH PROFILING MEASUREMENTS WITH AUGER-ELECTRON SPECTROSCOPY [J].

AHN, J ;

PERLEBERG, CR ;

WILCOX, DL ;

COBURN, JW ;

WINTERS, HF .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (10) :4581-4583

[4] NEGATIVE ION BOMBARDMENT OF INSULATORS TO ALLEVIATE SURFACE CHARGE-UP [J].

ANDERSEN, CA ;

RODEN, HJ ;

ROBINSON, CF .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) :3419-+

[5]

Andersen CA., 1970, INT J MASS SPECTROM, V3, P413, DOI [10.1016/0020-7381(70)80001-8, DOI 10.1016/0020-7381(70)80001-8]

[6] DOSE DEPENDENCE OF 45 keV V + AND Bi + ION SPUTTERING YIELD OF COPPER. [J].

Andersen, Hans Henrik .

Radiation Effects, 1973, 19 (04) :257-261

[7]

Andersen H. H., 1973, Radiation Effects, V19, P139, DOI 10.1080/00337577308232233

[8] SPUTTERING OF MULTICOMPONENT METAL AND SEMICONDUCTOR TARGETS [J].

ANDERSEN, HH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :770-771

[9] DEPTH RESOLUTION OF SPUTTER PROFILING [J].

ANDERSEN, HH .

APPLIED PHYSICS, 1979, 18 (02) :131-140

[10] HEAVY-ION SPUTTERING YIELD OF SILICON [J].

ANDERSEN, HH ;

BAY, HL .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) :1919-1921

← 1 2 3 4 5 6 7 8 9 10 →