ATOM-PROBE STUDY OF SILICIDE FORMATION AT NI/SI INTERFACES

被引：13

作者：

NISHIKAWA, O

SHIBATA, M

YOSHIMURA, T

NOMURA, E

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 01期

关键词：

D O I：

10.1116/1.582908

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：21 / 23

页数：3

共 11 条

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[8] ATOM-PROBE STUDY OF THE EARLY STAGE OF SILICIDE FORMATION .1. W-SI SYSTEM [J].

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[9] ATOM-PROBE STUDY OF THE INITIAL-STAGE OF SILICIDE FORMATION [J].

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