ATOM-PROBE STUDY OF THE EARLY STAGE OF SILICIDE FORMATION .2. NI-SI SYSTEM

被引:24
作者
NISHIKAWA, O
NOMURA, E
WADA, M
TSUNASHIMA, Y
HORIE, S
SHIBATA, M
YOSHIMURA, T
UEMORI, R
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 01期
关键词
D O I
10.1116/1.582533
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:10 / 14
页数:5
相关论文
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