LOW-TEMPERATURE ETCHING OF SILICON TRENCHES WITH SF6 IN AN ELECTRON-CYCLOTRON RESONANCE REACTOR

被引：6

作者：

WATTS, AJ ^{[1
]}

VARHUE, WJ ^{[1
]}

机构：

[1] IBM CORP,ESSEX JCT,VT 05452

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1992年 / 10卷 / 04期

关键词：

D O I：

10.1116/1.578245

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Trenches were etched in silicon with SF6 in an electron cyclotron resonance reactor. Etch rate and etch anisotropy were increased with radio-frequency substrate bias. Etch anisotropy was also improved by lowering the temperature of the substrate to - 100-degrees-C. Optical emission spectroscopy was used to measure the concentration of free fluorine in the plasma stream. Etch rate measurements were correlated to fluorine concentrations.

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页码：1313 / 1317

页数：5

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